? 2012 ixys corporation, all rights reserved ds100159d(01/12) high voltage power mosfet (electrically isolated tab) n-channel enhancement mode features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 4000v~ electrical isolation z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density applications z high voltage power supplies z capacitor discharge applications z pulse circuits z laser and x-ray generation systems IXTF1N400 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 4000 v v dgr t j = 25 c to 150 c, r gs = 1m 4000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c1a i dm t c = 25 c, pulse width limited by t jm 3a p d t c = 25 c 160 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 n/lb. v isol 50/60hz , 1 minute 4000 v~ weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = 3.2kv, v gs = 0v 50 a v ds = 4.0kv 250 a v ds = 3.2kv note 2, t j = 100 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 60 v dss = 4000v i d25 = 1a r ds(on) 60 1 = gate 5 = drain 2 = source isoplus i4-pak tm isolated tab 1 5 2
ixys reserves the right to change limits, test conditions, and dimensions. IXTF1N400 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 50v, i d = 0.5 ? i d25 , note 1 0.55 0.95 s c iss 2530 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 93 pf c rss 30 pf t d(on) 28 ns t r 24 ns t d(off) 81 ns t f 90 ns q g(on) 78 nc q gs v gs = 10v, v ds = 1kv, i d = 0.5 ? i d25 10 nc q gd 35 nc r thjc 0.78 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 1 a i sm repetitive, pulse width limited by t jm 5 a v sd i f = 1a, v gs = 0v, note 1 4 v t rr i f = 1a, -di/dt = 100a/ s, v r = 200v 3.5 s resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 1a r g = 2 (external) notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. part must be heatsunk for high-temp idss measurement. isoplus i4-pak tm (hv) outline pin 1 = gate pin 2 = soure pin 3 = drain pin 4 = isolated
? 2012 ixys corporation, all rights reserved IXTF1N400 fig. 1. output characteristics @ t j = 25oc 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 5 10 15 20 25 30 35 40 45 50 v ds - volts i d - amperes v gs = 10v 4.5v 4v 5v 3v fig. 3. output characteristics @ t j = 125oc 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 102030405060708090100 v ds - volts i d - amperes v gs = 10v 5v 4v 3v fig. 4. r ds(on) normalized to i d = 0.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 1.0a i d = 0.5a fig. 5. r ds(on) normalized to i d = 0.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i d - milliamperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 0.2 0.4 0.6 0.8 1 1.2 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 2. extended output characteristics @ t j = 25oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 50 100 150 200 250 300 350 400 v ds - volts i d - amperes v gs = 10v 4.5v 4v 5v 3v
ixys reserves the right to change limits, test conditions, and dimensions. IXTF1N400 ixys ref: t_1n400(8p)8-25-09-a fig. 7. input admittance 0 0.2 0.4 0.6 0.8 1 1.2 1.4 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 0.4 0.8 1.2 1.6 2 2.4 00.511.5 22.533.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 1020304050607080 q g - nanocoulombs v gs - volts v ds = 1000v i d = 0.5a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse w idth - seconds z (th)jc - oc / w
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